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Advance Technical Information
HiPerFASTTM IGBT C2-Class High Speed IGBT
IXGA IXGP IXGA IXGP
16N60C2 16N60C2 16N60C2D1 16N60C2D1
VCES IC25 VCE(sat)
tfi(typ)
= 600 V = 40 A = 3.0 V = 35 ns
D1
Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 110C (IXG_16N60C2D1 diode) TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 22 Clamped inductive load TC = 25C
Maximum Ratings 600 600 20 30 40 16 11 100 ICM = 32 @0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A A
G G C
TO-263 (IXGA)
C (TAB)
TO-220 (IXGP)
W C C C Features C C g g G = Gate E = Emitter
CE
C (TAB)
C = Collector TAB = Collector
Mounting torque
(M3.5 screw)
0.55/5 Nm/lb.in. 300 260 4 2
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight TO-220 TO-263
Very high frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 16N60C2 16N60C2D1 5.0 25 50 100 3.0 TJ=125C 2.1 V A A nA V V
VGE(th) ICES IGES VCE(sat)
IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 12 A, VGE = 15 V Note 2
(c) 2004 IXYS All rights reserved
DS99142A(3/04)
IXGP 16N60C2 IXGA 16N60C2D1 IXGA 16N60C2 IXGA 16N60C2D1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 12 720 55 65 19 IC = 20A, VGE = 15 V, VCE = 0.5 VCES 32 6 10 Inductive load, TJ = 25C IC = 12 A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Note 1. 25 15 60 35 60 Inductive load, TJ = 125C IC = 12A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Note 1 16N60C2D1 25 18 0.38 120 70 150 (IXGP) 0.5 100 120 S pF pF pF pF nC nC nC ns ns ns ns J ns ns mJ ns ns J 0.83 K/W K/W TO-263 Outline Reverse Diode (FRED) Symbol VF IRM t rr t rr RthJC Notes: Test Conditions IF = 10 A, VGE = 0 V TJ = 125 C IF = 12 A; -diF/dt = 100 A/s, VR = 100 V VGE = 0 V; TJ = 125 C IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V 2.5 110 30 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.66 1.66 V A ns ns 2.5 K/W 1. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ, or increased RG. 2. Pulse test, t 300 s, duty cycle d 2 %
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015
TO-220 Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 12A; VCE = 10 V, Note 2. VCE = 25 V, VGE = 0 V, f = 1 MHz 16N60C2 16N60C2D1
Pins: 1 - Gate 3 - Emitter
2 - Collector 4 - Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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